BAP65-02
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? NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 5 — 28 September 2010
4 of 9
NXP Semiconductors
BAP65-02
Silicon PIN diode
f = 100 MHz; Tj
=25?Cf=1MHz;
T
j
=25?C
Fig 1. Forward resistance as a function of forward
current; typical values
Fig 2. Diode capacitance as a function of reverse
voltage; typical values
(1) IF
=0.5mA
(2) IF
=1mA
(3) IF
=5mA
(4) IF
=10mA
(5) IF
= 100 mA
Diode inserted in series with a 50
?
stripline circuit and
biased via the analyzer Tee network. Tamb
=25?C.
Diode zero biased and inserted in series with a 50
?
stripline circuit. Tamb
=25?C.
Fig 3. Insertion loss (?s21?2) of the diode as a function
of frequency; typical values
Fig 4. Isolation (?s21?2) of the diode as a function of
frequency; typical values
10
1
10?110?1
mld499
1
10 102I
F
(mA)
rD
(Ω)
0
024
81216
0
VR
(V)
1000
200
400
600
800
Cd
(fF)
mld500
0.5
0
1000
(1) (2) (3) (4)
(5)
2000
f (MHz)
3000
0
?
?0.1
?0.2
?0.3
?0.4
mld501
s21
2
(dB)
40
0
1000
2000
f (MHz)
3000
0
?10
?30
?
?20
mld502
s21
2
(dB)
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